Flicker noise characteristics of advanced MOS technologies

Author

Hung, K.K. ; Ko, P.K. ; Hu, C. ; Cheng, Y.C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

34

Lastpage

37

Abstract

The flicker noise behavior of MOSFETs fabricated by different technologies were characterized. It was found that the technology has very significant effects on the noise characteristics and that all the results can be explained within a unified framework with an oxide trap density distribution. Hot-carrier stressing of n-channel MOSFETs can result in a very large increase of flicker noise, whereas for p-channel MOSFETs the noise is hardly affected. Random telegraph noise is observed in some deep-submicron MOSFETs with very small channel area. A detailed analysis of the telegraph noise suggests that the mobility fluctuation induced by charge trapping plays an important role in the origin of the flicker noise. A novel flicker-noise model incorporating both carrier number and mobility fluctuations is proposed.<>

Keywords

electron device noise; hot carriers; insulated gate field effect transistors; random noise; semiconductor device models; advanced MOS technologies; carrier number; carrier number fluctuations; charge trapping; deep-submicron MOSFETs; different technologies; flicker noise behavior; flicker-noise model; hot carrier stressing; mobility fluctuation; n-channel MOSFETs; noise characteristics; origin of flicker noise; oxide trap density distribution; p-channel MOSFETs; random telegraph noise; small channel area; 1f noise; CMOS technology; Data mining; Fluctuations; Integrated circuit noise; MOSFETs; Noise measurement; Scattering; Telegraphy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32743

Filename

32743