Title :
The effect of p-doping in InP/AlGaInP quantum dot lasers
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Dept. of Phys., King Abdulaziz Univ., Jeddah, Saudi Arabia
Abstract :
We measure optical gain and absorption spectra for structures with different p-doping level. Results show an increase in maximum modal gain at fixed quasi-Fermi level separation and high defect number in the high p-doped structure.
Keywords :
Fermi level; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light absorption; quantum dot lasers; semiconductor doping; InP-AlGaInP; InP/AlGaInP quantum dot lasers; optical absorption spectra; optical gain; p-doped structure; p-doping level; quasiFermi level separation; Absorption; Current measurement; Doping; Gain measurement; Indium phosphide; Optical variables measurement; Quantum dot lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348368
