DocumentCode
2135968
Title
Polariton lasers
Author
Grandjean, Nicolas
Author_Institution
Inst. of Condensed Matter Phys. (ICMP), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
141
Lastpage
142
Abstract
High-quality factor microcavities (MCs) are mandatory for polariton lasing. However, MCs are quite difficult to achieve in III-V nitrides because of the large lattice mismatch between GaN and AlN binary compounds. To circumvent this issue, lattice-matched AlInN alloy was implemented. AlInN/GaN based MCs with quality factors in excess of 6000 have then been fabricated. Combining such MCs to GaN quantum wells exhibiting low inhomogeneous broadening allowed to achieve Rabi splitting in excess of 50 meV.
Keywords
III-V semiconductors; Q-factor; aluminium compounds; gallium compounds; indium compounds; microcavity lasers; optical fabrication; polaritons; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; AlInN-GaN; III-V nitrides; Rabi splitting; binary compounds; gallium nitride quantum wells; high-quality factor microcavity; lattice-matched alloy; optical fabrication; polariton lasers; Atomic beams; Atomic measurements; Cavity resonators; Excitons; Gallium nitride; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348374
Filename
6348374
Link To Document