• DocumentCode
    2136118
  • Title

    Simulation of Self-heating HBTs Based on Isothermal Gummel-Poon Model

  • Author

    Zhu, Y. ; Twynam, J.K. ; Kishimoto, K. ; Yagura, M. ; Hasegawa, M. ; Hasegawa, T. ; Sakuno, Z. ; Yamada, A. ; Suematsu, E. ; Sato, H.

  • Author_Institution
    Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, Japan. Tel: 81-7436-5-2485, Fax: 81-7436-5-2487, E-mail: zhu@mic.tnr.sharp.co.jp
  • Volume
    2
  • fYear
    1997
  • fDate
    8-12 Sept. 1997
  • Firstpage
    903
  • Lastpage
    908
  • Abstract
    Based on the correlation between the electron and hole injection currents at the emitter junction, a simple dc model of self-heating HBTs has been developed by introducing three physically-based parameters into the isothermal Gummel-Poon model, which is easy to construct and implant to circuit simulators. Both the self-heating and the anbient temperature effects can be simulated accurately. The electrical and thermal parameters of HBTs can be evaluated from the extracted model parameters, and a novel method for separating the base current components has also be developed.
  • Keywords
    Charge carrier processes; Circuit simulation; Electron emission; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Isothermal processes; Laboratories; Semiconductor process modeling; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1997. 27th European
  • Conference_Location
    Jerusalem, Israel
  • Type

    conf

  • DOI
    10.1109/EUMA.1997.337910
  • Filename
    4138962