Ternary comb-like silicon photonic crystal: Oxidation, intrinsic modes, reflection windows and contrastivity

Author

Glushko, E.Ya.

Author_Institution

Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2013

fDate

9-13 Sept. 2013

Firstpage

56

Lastpage

57

Abstract

A ternary photonic crystal - A/B/A/C periodic structure is investigated analytically and numerically in the framework of transfer matrix formalism. The influence of oxidation to photonic gaps and positions of reflection windows for (SiO₂/Si/SiO₂/Air)_N structure is calculated. It was shown that intrinsic optical contrastivity has a non-monotone behavior during the process of oxidation of silicon. The found results will allow to determine the optimal regimes of oxidation to obtain needed photonic device properties.

Keywords

elemental semiconductors; numerical analysis; oxidation; photonic band gap; photonic crystals; silicon; silicon compounds; (SiO₂-Si-SiO₂)_N; A/B/A/C periodic structure; intrinsic modes; intrinsic optical contrastivity; nonmonotone behavior; numerical analysis; oxidation; photonic device properties; photonic gaps; reflection windows; ternary comb-like silicon photonic crystal; transfer matrix formalism; Optical reflection; Oxidation; Photonic band gap; Photonics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on

Conference_Location

Sudak

ISSN

2160-1518

Print_ISBN

978-1-4799-0016-9

Type

conf

DOI

10.1109/CAOL.2013.6657525

Filename

6657525