DocumentCode
2136284
Title
Electrically driven photonic crystal nanocavity laser
Author
Matsuo, Shinji
Author_Institution
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
163
Lastpage
164
Abstract
We develop electrically driven photonic crystal laser employing an ultracompact active region embedded with InP photonic crystal slab. The device exhibits threshold current of 0.39 mA and the maximum 3-dB modulation bandwidth of 8.4 GHz.
Keywords
III-V semiconductors; indium compounds; laser cavity resonators; nanophotonics; optical fabrication; optical modulation; photonic crystals; semiconductor lasers; InP; current 0.39 mA; electrically-driven photonic crystal nanocavity laser; frequency 8.4 GHz; indium phosphide photonic crystal slab; modulation bandwidth; noise figure 3 dB; optical fabrication; semiconductor lasers; ultracompact active region; Bandwidth; Indium phosphide; Modulation; Photonic crystals; Photonics; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348385
Filename
6348385
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