DocumentCode
2136338
Title
Photonic crystal surface emitting lasers based on epitaxial regrowth
Author
Taylor, R.J.E. ; Williams, D.M. ; Groom, K.M. ; Childs, D.T.D. ; Stevens, B.J. ; Roberts, T. ; Khamas, S. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Yoshiki
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
167
Lastpage
168
Abstract
This paper describes the flexibility in band-structure engineering which an all-semiconductor photonic crystal device makes possible, and the optimum photonic crystal design for achieving flat photonic bands and optimal coupling strengths. The realisation of a re-grown photonic crystal and the operating characteristics of this new type of device are discussed.
Keywords
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; photonic band gap; photonic crystals; semiconductor lasers; surface emitting lasers; AlAs-GaAs; all-semiconductor photonic crystal device; band-structure engineering; epitaxial regrowth; flat photonic bands; optimal coupling strength; optimum photonic crystal design; photonic crystal surface emitting lasers; Atomic measurements; Gallium arsenide; Photonic crystals; Photonics; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348387
Filename
6348387
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