Title :
Photonic crystal surface emitting lasers based on epitaxial regrowth
Author :
Taylor, R.J.E. ; Williams, D.M. ; Groom, K.M. ; Childs, D.T.D. ; Stevens, B.J. ; Roberts, T. ; Khamas, S. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Yoshiki
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
This paper describes the flexibility in band-structure engineering which an all-semiconductor photonic crystal device makes possible, and the optimum photonic crystal design for achieving flat photonic bands and optimal coupling strengths. The realisation of a re-grown photonic crystal and the operating characteristics of this new type of device are discussed.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; photonic band gap; photonic crystals; semiconductor lasers; surface emitting lasers; AlAs-GaAs; all-semiconductor photonic crystal device; band-structure engineering; epitaxial regrowth; flat photonic bands; optimal coupling strength; optimum photonic crystal design; photonic crystal surface emitting lasers; Atomic measurements; Gallium arsenide; Photonic crystals; Photonics; Surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348387
