• DocumentCode
    2136633
  • Title

    7.12 W/mm (up to 1.7W) CW X-band InGaP/GaAs HBTs: Top Heat Sink and Topology Influence

  • Author

    Floriot, D. ; Delage, S-L. ; Chartier, E. ; Blanck, H. ; Poisson, M-A

  • Author_Institution
    THOMSON-CSF - Central Research Laboratories, Domaine de Corbeville - 91404 Orsay Cedex - France
  • Volume
    2
  • fYear
    1997
  • fDate
    8-12 Sept. 1997
  • Firstpage
    1026
  • Lastpage
    1029
  • Abstract
    In this paper, we report a 1.7 W output power and 55% PAE at 10 GHz using thermally shunted multi-finger HBTs having a total emitter area of 2×240 ¿2. We show that the global power performances of our HBTs are not depending on the total emitter lenght, especially in term of PAE. It is demonstrated that the parallel combining topology is more suitable for power amplification than the fishbone topology (1-dB improvement on the linear power gain).
  • Keywords
    Gain; Gallium arsenide; Heat sinks; Heterojunction bipolar transistors; Laboratories; Power amplifiers; Power generation; Pulse amplifiers; Thermal resistance; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1997. 27th European
  • Conference_Location
    Jerusalem, Israel
  • Type

    conf

  • DOI
    10.1109/EUMA.1997.337931
  • Filename
    4138983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2136633