DocumentCode
2136664
Title
High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications
Author
Marsetz, W. ; Hülsmann, A. ; Kleindienst, T. ; Fischer, S. ; Demmler, M. ; Bronner, W. ; Fink, T. ; Köhler, K. ; Schlechtweg, M.
Author_Institution
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr 72, 79108 Freiburg, Germany, Phone +49-761-5159-641, Fax +49-761-5159-565, E-mail: marsetz@iaf.fhg.de
Volume
2
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
1030
Lastpage
1034
Abstract
Double recessed T-gate Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic HEMTs with 0.3 ¿m gate length and different upper recess widths have been processed and analyzed. Systematic investigations concerning the correlation between drain ledge, breakdown voltage and power performance have been carried out. An optimum upper recess width has been identified which yields to a high drain-source breakdown voltage of about 24 V. A state of the art saturated output power density of 1080 mW/mm at 2 GHz is demonstrated under CW-mode of operation. DC and power measurements are performed on wafers which are not thinned.
Keywords
Breakdown voltage; Etching; Gallium arsenide; HEMTs; MODFETs; PHEMTs; Performance analysis; Performance evaluation; Power generation; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337932
Filename
4138984
Link To Document