DocumentCode
2136710
Title
High-performance Power PHEMT for Wireless Communications
Author
Tkachenko, Y. ; Kapitan, L. ; Leung, L. ; Mitchell, D. ; Bartle, D.
Author_Institution
Alpha Industries, 20 Sylvan Rd, Woburn MA, 01801, Tel (617)-935-5150, Fax (617)-8244572, e-mail: gtkachenko@alphaind.com
Volume
2
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
1041
Lastpage
1045
Abstract
A low-cost 0.7 ¿m gate power pseudoinorplhic high-electron-mobility transistor (PHEMT) process was developed. PHEMT structure, etch profile and passivation conditions were optimized to yield a device with high breakdown combined with minimal gate lag. A 2 mm PHEMT exhibits dc Idss. of 300 mA/mm, Imax of 500 mA/mm, peak Gm of 360 mS/mm and 3-terminal breakdown voltage of 13 V. At 0.85 GHz such a device exhibits a record output power density of 630 mW/mmn at Vds=5.8 V and 290 mW/mm at Vds=3.4 V with associated PAE of 60%.
Keywords
Electric breakdown; Gallium arsenide; Knee; Low voltage; MESFETs; PHEMTs; Passivation; Pulse measurements; Silicon; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337934
Filename
4138986
Link To Document