• DocumentCode
    2136967
  • Title

    Numerical analysis of the performance of AlGaAs/GaAs multi-quantum well Superluminescent diodes

  • Author

    Asgari, Asghar ; Navaeipour, P.

  • Author_Institution
    Res. Inst. for Appl. Phys. & Astron., Univ. of Tabriz, Tabriz, Iran
  • fYear
    2013
  • fDate
    9-13 Sept. 2013
  • Firstpage
    117
  • Lastpage
    119
  • Abstract
    In this paper we have investigated numerically the performance of AlGaAs/GaAs multi-quantum well superluminescent diodes. In this device the dependence of optical gain, output power on the cavity length and the density states have been analyzed. It is observed that the optical gain and its FWHM bandwidth increase with increasing the density state. Also, the output power increases with increasing the cavity length, whereas the FWHM bandwidth decreases..
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; numerical analysis; quantum well devices; superluminescent diodes; AlGaAs-GaAs; FWHM bandwidth; cavity length; density states; multiquantum well superluminescent diodes; numerical analysis; optical gain; output power; Cavity resonators; Optical fiber sensors; Optical fibers; Optical reflection; Power amplifiers; Power generation; Superluminescent diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
  • Conference_Location
    Sudak
  • ISSN
    2160-1518
  • Print_ISBN
    978-1-4799-0016-9
  • Type

    conf

  • DOI
    10.1109/CAOL.2013.6657549
  • Filename
    6657549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2136967