Title :
Determination of Device Lifetime Under Pulsed Operating Conditions
Author :
Billups, A.J. ; O´Haver, K.W. ; Kopp, B.A.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD
fDate :
May 30 2006-June 2 2006
Abstract :
Junction temperature typically determines the time to wear-out for a power amplifier, and thermal management affects many critical power amplifier design choices such as packaging, gate pitch, and wafer thickness. Pulsed waveforms create a junction temperature that varies as a function of time. Often the maximum temperature during the pulsed waveform is used to determine the failure rate for a pulsed device. This does not accurately reflect the time that a pulsed device spends at lower operating temperatures, however. A methodology is presented here to determine a device´s time to failure for a pulsed waveform application. Several examples are provided to demonstrate that a pulsed device´s lifetime can be significantly longer as compared to that associated with its maximum pulsed temperature
Keywords :
failure analysis; power amplifiers; pulse shaping circuits; semiconductor device packaging; semiconductor device reliability; thermal management (packaging); device lifetime; junction temperature; maximum pulsed temperature; power amplifier wear out; pulsed operating conditions; pulsed waveform application; reliability; thermal management; transient thermal; Energy management; Gallium arsenide; Packaging; Photonic band gap; Power amplifiers; Power dissipation; Pulse amplifiers; Steady-state; Temperature; Thermal management;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronics Systems, 2006. ITHERM '06. The Tenth Intersociety Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9524-7
DOI :
10.1109/ITHERM.2006.1645467