Title :
A high performance 0.25 mu m CMOS technology
Author :
Davari, B. ; Chang, W.H. ; Wordeman, M.R. ; Oh, C.S. ; Taur, Y. ; Petrillo, K.E. ; Moy, D. ; Bucchignano, J.J. ; Ng, H.Y. ; Rosenfield, M.G. ; Hohn, F.J. ; Rodriguez, M.D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A high-performance 0.25- mu m CMOS (complementary metal oxide semiconductor) technology with a reduced operating voltage of 2.5 V is presented. A loaded ring oscillator (NAND FI=FO=3. C/sub w/=0.2 pF) delay per stage of 280 ps achieved (W/sub eff//L/sub eff/=15 mu m/0.25 mu m), which is a 1.7 X improvement over 0.5- mu m CMOS technology. At shorter channel lengths (0.18 mu m), a CMOS stage delay of 38 ps for unloaded inverter ring oscillators and 185 ps for loaded NAND are demonstrated. A reduced operating voltage in the range of 2.2-2.5 V is chosen to optimize performance without compromising reliability. Shallow junctions with abrupt profiles are used to minimize device series resistance as well as gate-to-source/drain (S/D) overlap capacitance. Dural poly (n/sup +/ and p/sup +/) gates are used to avoid buried-channel operation pFETs, resulting in superior short-channel characteristics. Poly and S/D sheet resistances are lowered, using a thin salicide (TiSi/sub 2/) process.<>
Keywords :
CMOS integrated circuits; VLSI; digital integrated circuits; integrated circuit technology; oscillators; 0.25 to 0.18 micron; 2.2 to 2.5 V; 38 to 280 ps; CMOS technology; TiSi/sub 2/; abrupt profiles; device series resistance; loaded ring oscillator; overlap capacitance; reduced operating voltage; reliability; short-channel characteristics; thin salicide; unloaded inverter ring oscillators; CMOS technology; Circuit optimization; Delay; Hot carriers; Inverters; Power engineering and energy; Reliability engineering; Ring oscillators; Threshold voltage; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32749
