Title :
Monolithic Low Voltage Power Amplifier for Portable Low Range Transceiver
Author :
Fortes, Femando ; do Rosario, Maria Joao ; Freire, J.Costa
Author_Institution :
Instituto de Telecomunicações, Instituto Superior Técnico, Av. Rovisco Pais, 1096 Lisboa, Portugal. Tel: +351-1-8418491; Fax: +351-1-8419341
Abstract :
This paper describes the design and test of a monolithic class A power amplifier with 100mW output power at 2GHz with a 3V power supply. The circuit was designed with a 0.5¿m gate length GaAs MESFET low power technology. All matching and bias elements are on-chip. The matching networks topology and design take into account the fabrication process dispersion. The total amplifier chip area is 2mm2. In class A operation the 1 dB compression point output power at 2GHz is 17.3 dBm and the gain 11.3dB. With gate self bias the amplifier saturates at 19.6dBm but delivers 19.5dBm with a gain of 8.6dB.
Keywords :
Circuit testing; Fabrication; Gallium arsenide; Low voltage; MESFET circuits; Network topology; Power amplifiers; Power generation; Power supplies; Transceivers;
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
DOI :
10.1109/EUMA.1997.337954
