DocumentCode :
2137411
Title :
High efficient vertical LED with pattern surface texture
Author :
Mustary, Mumta Hena ; Lysak, V.V.
Author_Institution :
Chonbuk Nat. Univ., Chonju, South Korea
fYear :
2013
fDate :
9-13 Sept. 2013
Firstpage :
166
Lastpage :
168
Abstract :
A quantitative investigation of light extraction efficiency for hemispherical and pyramidal pattern surface textured GaN based vertical light emitting diode (VLED) was reported by various distance and size ratios. There is a significant increase in light extraction efficiency because of increase number of random scattering of textured surface. Hemisphere pattern surface always gives the 30% better enhancement than pyramid type pattern. We also showed the efficiency dependency on the reflectivity of GaN/metal interface. Furthermore, a linear diffraction grating with certain grating period can eliminate the distance and size ratio dependency on output power which can be considered as an integrated surface texture.
Keywords :
III-V semiconductors; diffraction gratings; gallium compounds; light emitting diodes; light scattering; reflectivity; surface texture; wide band gap semiconductors; GaN; VLED; distance/size ratio; hemispherical pattern surface texture; integrated surface texture; light extraction efficiency; linear diffraction grating; metal interface; pyramidal pattern surface texture; random scattering; reflectivity; vertical light emitting diode; Gallium nitride; Gratings; Light emitting diodes; Metals; Reflectivity; Substrates; Surface texture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
ISSN :
2160-1518
Print_ISBN :
978-1-4799-0016-9
Type :
conf
DOI :
10.1109/CAOL.2013.6657566
Filename :
6657566
Link To Document :
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