Title :
Status of InP HEMT technology for microwave receiver applications
Author_Institution :
Sanders Associates Inc., Nashua, NH, USA
Abstract :
The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; microwave amplifiers; microwave receivers; 100 GHz; InP; InP HEMT technology; low noise amplification; material processing; microwave receiver; reliability; Frequency measurement; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Microwave technology; Noise figure; Noise measurement; PHEMTs;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508450
