Title :
A Ka-band GaInP/GaAs HBT four-stage LNA
Author :
Freundorfer, A.P. ; Jamani, Y. ; Falt, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada
Abstract :
A Ka-band GaInP/GaAs HBT four-stage LNA has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. An average noise figure of 6 dB from 27 GHz to 30 GHz, and a gain of greater than 15 dB were measured. These results are the best reported at Ka-band for a LNA using transistors from digital HBT library.
Keywords :
III-V semiconductors; bipolar transistor circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 15 dB; 27 to 30 GHz; 6 dB; GaInP-GaAs; Ka-band GaInP/GaAs HBT four-stage LNA; LMDS circuit; analog transmission; digital transmission; gain; local multipoint distribution system; multifunction T/R module; noise figure; Circuit noise; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Laboratories; Noise figure; Noise measurement; Software libraries; Telephony;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508453
