DocumentCode :
2137617
Title :
A thermal conductivity model for micro-nanoscale diamond thin films using dispersion curve data
Author :
Kalisik, Todd ; Majumdar, Pradip
Author_Institution :
Dept. of Mech. Eng., Northern Illinois Univ., DeKalb, IL
fYear :
2006
fDate :
May 30 2006-June 2 2006
Firstpage :
1199
Lastpage :
1207
Abstract :
Thermal conductivity is investigated for cubic C (diamond). Boundary scattering, Umklapp processes, normal processes and presence of impurities are the mechanisms considered for heat flow resistance. Three symmetry directions [001], [110], [111], and three polarizations for each direction in the first Brillouin zone are considered for the material. The main purpose of this study is to analyze the effect of the curvature of phonon dispersion curves on the thermal conductivity, and develop an accurate model. The model incorporates the effects of impurity and impurity concentration, film thickness, and crystal orientation on thermal conductivity. The model is validated by comparing results with experimental data for diamond. The results show that the curvature of the dispersion curves dramatically affects the thermal conductivity. A sensitivity analysis is conducted to study the effect of boundary scattering as the film decreases in thickness and the effect of impurities
Keywords :
Brillouin zones; crystal orientation; diamond; heat transfer; impurity absorption spectra; nanostructured materials; phonon-impurity interactions; sensitivity analysis; thermal conductivity; thin films; umklapp process; Brillouin zone; Umklapp processes; [001] symmetry; [110] symmetry; [111] symmetry; boundary scattering; crystal orientation; curvature effect; diamond thin films; dispersion curve data; film thickness; heat flow resistance; impurity concentration; impurity effect; normal processes; phonon dispersion curves; sensitivity analysis; thermal conductivity model; Brillouin scattering; Conducting materials; Conductive films; Crystalline materials; Impurities; Phonons; Polarization; Resistance heating; Thermal conductivity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronics Systems, 2006. ITHERM '06. The Tenth Intersociety Conference on
Conference_Location :
San Diego, CA
ISSN :
1087-9870
Print_ISBN :
0-7803-9524-7
Type :
conf
DOI :
10.1109/ITHERM.2006.1645481
Filename :
1645481
Link To Document :
بازگشت