DocumentCode
2137826
Title
With GaAs MMICs towards Dual Band Front End Applications in Wireless Communication
Author
Fürst, Robert
Author_Institution
Siemens Semiconductors, Siemens Discrete & RF Semiconductors, P.O. Box 80 17 09, D-81617 Mÿnchen, Germany. Email: robert.d.r.fuerst@p56.mch2.siemens.net
Volume
2
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
1289
Lastpage
1294
Abstract
Siemens is one of the biggest GaAs RF device manufacturer focusing mainly on mobile communication applications. With the penetration of 3V technologies for handhelds, GaAs devices are becoming mandatory for effiency and noise sensitive applications for RF frontends in mobile communications. While system specific monolithic microwave ICs (MMIC) are becoming standard the integration of different communication systems requires specific dual or even multi mode operations. Keeping a comparable perfomance like single band solutions requires innovative solutions especially for the power amplifier part. We are presenting the first results of a study for the most power and cost effective solutions. Following this concepts even the integration of satellite services like Iridium with terrestrial systems should be possible with one integrated power amplifier device.
Keywords
Communication standards; Dual band; Gallium arsenide; MMICs; Manufacturing; Microwave devices; Mobile communication; Power amplifiers; Radio frequency; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337975
Filename
4139027
Link To Document