• DocumentCode
    2137826
  • Title

    With GaAs MMICs towards Dual Band Front End Applications in Wireless Communication

  • Author

    Fürst, Robert

  • Author_Institution
    Siemens Semiconductors, Siemens Discrete & RF Semiconductors, P.O. Box 80 17 09, D-81617 Mÿnchen, Germany. Email: robert.d.r.fuerst@p56.mch2.siemens.net
  • Volume
    2
  • fYear
    1997
  • fDate
    8-12 Sept. 1997
  • Firstpage
    1289
  • Lastpage
    1294
  • Abstract
    Siemens is one of the biggest GaAs RF device manufacturer focusing mainly on mobile communication applications. With the penetration of 3V technologies for handhelds, GaAs devices are becoming mandatory for effiency and noise sensitive applications for RF frontends in mobile communications. While system specific monolithic microwave ICs (MMIC) are becoming standard the integration of different communication systems requires specific dual or even multi mode operations. Keeping a comparable perfomance like single band solutions requires innovative solutions especially for the power amplifier part. We are presenting the first results of a study for the most power and cost effective solutions. Following this concepts even the integration of satellite services like Iridium with terrestrial systems should be possible with one integrated power amplifier device.
  • Keywords
    Communication standards; Dual band; Gallium arsenide; MMICs; Manufacturing; Microwave devices; Mobile communication; Power amplifiers; Radio frequency; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1997. 27th European
  • Conference_Location
    Jerusalem, Israel
  • Type

    conf

  • DOI
    10.1109/EUMA.1997.337975
  • Filename
    4139027