Nanosized structures with the field localization: New opportunities for precise control of photonic and electronic devices

This paper describes the results of research in the tunnel photoelectric effect in microdiode with the localization of an electrostatic field at the emitter of carbon nanosized structure. It is experimentally found that irradiation of carbon emitter by photon beams with low energy (less than the work function) within the spectral range 380 - 1550 nm and with micro- and milliwatt optical power may initiate tunneling of photocurrent by controlling the field intensity in the gap “anode - emitter”. The peculiarities of the design and application of photonic and electronic devices using an photoelectric effect with “red” threshold are discussed. The estimation of investigated photoemitter broadbandness is made, an opportunity to work in a range of wavelengths from ultraviolet up to far infrared is predicted. A method for controlling a tunneling current of emission by changing the optical power density is suggest. In this case, the voltage-current characteristic becomes a linearly dependent on the level of optical power density, which ensures stability of controlling.