DocumentCode
2138017
Title
A new spline based FET model for MESFETs and HEMTs
Author
Follmann, R. ; Tempel, R. ; Sporkmann, T. ; Wolff, I.
Author_Institution
Institute of Mobile and Satellite Communication Techniques (IMST), Carl-Friedrich-Gauss-StraÃ\x9fe 2, D-47475 Kamp-Lintfort, FRG
Volume
2
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
1360
Lastpage
1366
Abstract
IN this paper a new spline based nonlinear transistor model for MESFETs and HEMTs is described. A bias dependent small signal equivalent circuit has been developed, as well as the corresponding static and large signal equivalent circuit. The linear circuit can be optimized without changing the quality of the static circuit. The nonlinear circuit is shown to be identical to the linear circuit for low input power and at all bias points. The model has been introduced into HP-EEsofs circuit simulator "Libra" and verified by utilizing linear and nonlinear measurements.
Keywords
Capacitance; Circuit simulation; Equivalent circuits; FETs; HEMTs; MESFETs; MODFETs; Scattering parameters; Spline; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337982
Filename
4139034
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