Temperature and bias effects in high resistivity silicon substrates

The purpose of this paper is to report the results of studies dealing with the impact of temperature and DC bias on low-cost low loss high resistivity (HR) Si substrate. Measured results show that microwave performance of a coplanar transmission lines and a meander inductive structure realized on HR Si are not affected by applied DC bias from -10 V to 10 V in the temperature range from -50/spl deg/C to 50/spl deg/C. Furthermore, measured results demonstrate that the losses of the structures under study on HR Si are comparable to the losses of similar structures on semi-insulating (SI) GaAs up to 100/spl deg/C.