Title :
A Ka-Band High Power Monolithic HEMT VCO Using a Sub-resonatore Circuit with Phase Control Architecture
Author :
Kashiwa, Takuo ; Katoh, Takayuki ; Ishida, Takao ; Kurusu, Hitoshi ; Mitsui, Yasuo
Author_Institution :
High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan. E-mail: kashiwa@oml.melco.co.jp
Abstract :
This paper reports on a high output performance of a Ka-band monolithic HEMT Voltage Controlled Oscillator(VCO). This VCO has a sub-resonator in order to avoid reduction in Q-factor of a resonator. Circuit elements of the sub-resonator are optimized to achieve a wide tuning range as well as high output power and low phase noise performances. In addition, an AlGaAs/InGaAs double-hetero structure High Electron Mobility Transistor(HEMT) is employed in the VCO to obtain a high output performance. A high output power of 19.4 dBm has been achieved at an oscillation frequency of 36.2 GHz. This performance has been achieved without any buffer amplifiers. A tuning range of more than 2.5 GHz is also obtained with a stable high output power. To our knowledge, this represents the highest output power of monolithic VCO without any buffer amplifiers.
Keywords :
Circuit optimization; HEMTs; Indium gallium arsenide; Phase control; Phase noise; Power amplifiers; Power generation; Q factor; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338084