Title :
A new technology for Si microwave power transistor manufacturing
Author :
Ping Li ; Boles, T.
Author_Institution :
Corporate Res. & Dev. Center, M/A-COM Inc., Lowell, MA, USA
Abstract :
We, for the first time, demonstrate a new process for Si power transistor manufacturing. The new process, combining the HMIC process and flip-chip process, completely changes the Si power transistor internal matching circuits design and manufacturing. S-band Si power transistor was used as a testing vehicle and under pulse operation condition. Pout=23 W with 7.9 dB of gain and 39% of efficiency were obtained at f=3.05 GHz and Vcc=36 V.
Keywords :
elemental semiconductors; flip-chip devices; impedance matching; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor technology; silicon; 23 W; 3.05 GHz; 36 V; 39 percent; 7.9 dB; HMIC process; S-band; Si; Si microwave power transistor; design; flip-chip process; internal matching circuits; manufacturing technology; pulse operation; Bonding; Circuit testing; Glass; Impedance matching; Manufacturing processes; Microwave technology; Packaging; Power transistors; Semiconductor device manufacture; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508473
