DocumentCode
2138197
Title
Broadband millimetric semiconductor junction circulators at 77 K
Author
Sloan, R. ; Yong, C.K. ; Davis, L.E.
Author_Institution
Univ. of Manchester Inst. of Sci. & Technol., UK
Volume
1
fYear
1996
fDate
17-21 June 1996
Firstpage
109
Abstract
Broadband circulation at millimetric frequencies is currently unavailable. However on utilising the gyrotropic behaviour of the magnetised semiconductor this appears possible. Low-loss theoretical results are presented which suggest GaAs and InSb circulators are feasible with bandwidths greater than an octave and operating up to 125 GHz at a temperature of 77 K.
Keywords
cryogenic electronics; gallium arsenide; indium compounds; millimetre wave circulators; 125 GHz; 77 K; EHF; GaAs; GaAs circulators; InSb; InSb circulators; MM-wave type; broadband circulation; gyrotropic behaviour; magnetised semiconductor; millimetric frequencies; semiconductor junction circulators; Circulators; Cyclotrons; Electrons; Equations; Frequency; Gallium arsenide; Gyrotropism; Magnetic fields; Plasma density; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.508474
Filename
508474
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