Title :
Broadband millimetric semiconductor junction circulators at 77 K
Author :
Sloan, R. ; Yong, C.K. ; Davis, L.E.
Author_Institution :
Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
Broadband circulation at millimetric frequencies is currently unavailable. However on utilising the gyrotropic behaviour of the magnetised semiconductor this appears possible. Low-loss theoretical results are presented which suggest GaAs and InSb circulators are feasible with bandwidths greater than an octave and operating up to 125 GHz at a temperature of 77 K.
Keywords :
cryogenic electronics; gallium arsenide; indium compounds; millimetre wave circulators; 125 GHz; 77 K; EHF; GaAs; GaAs circulators; InSb; InSb circulators; MM-wave type; broadband circulation; gyrotropic behaviour; magnetised semiconductor; millimetric frequencies; semiconductor junction circulators; Circulators; Cyclotrons; Electrons; Equations; Frequency; Gallium arsenide; Gyrotropism; Magnetic fields; Plasma density; Plasma temperature;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508474
