Title :
K-band circulators on semiconductor wafers
Author :
Adam, J.D. ; Buhay, H. ; Daniel, M.R. ; Eldridge, G.W. ; Hanes, M.H. ; Messham, R.L. ; Smith, T.J.
Author_Institution :
Sci. & Technol. Center, Westinghouse Electr. Corp., Pittsburgh, PA, USA
Abstract :
We report on the development of K-band circulators operating at 20 and 35 GHz which have been monolithically integrated with both GaAs and epitaxial GaAs-on-Si wafers. They demonstrate the potential for a fully integrated T/R module application.
Keywords :
MMIC; gallium arsenide; microwave circulators; millimetre wave circulators; 20 to 35 GHz; GaAs; GaAs wafers; GaAs-Si; K-band circulators; epitaxial GaAs-on-Si wafers; fully integrated T/R module application; semiconductor wafers; Circulators; Coplanar waveguides; Frequency; Gallium arsenide; Gold; K-band; Substrates; Surface impedance; Surface waves; Wafer bonding;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508475
