A high-performance and miniaturized dual-use (antenna/local) GaAs SPDT switch IC operating at +3 V/0 V

Author

Uda, H. ; Nogawa, K. ; Hirai, T. ; Sawai, T. ; Higashino, T. ; Harada, Y.

Author_Institution

Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

141

Abstract

We have developed an ultra-compact dual-use (antenna/local) switch IC for PHS operating at +3/0 V. This IC has a circuit configuration which utilizes MESFETs with two kinds of pinch-off voltages. Additional applied techniques include a circuit design method that employed electromagnetic field analysis, a pull-up method which utilizes forward current flowing in order through the gates of MESFETs, and high isolation characteristic obtained by use of a chip inductor. The insertion loss and isolation characteristics of this IC are, respectively, 0.54 dB and 28.4 dB at 1.9 GHz and 0.48 dB and 30.0 dB at 1.65 GHz. Furthermore, we were able to suppress adjacent channel leakage power to 61.5 dBc at 600-kHz offset during input power of 22 dBm QPSK modulated signals.

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; cordless telephone systems; field effect transistor switches; gallium arsenide; land mobile radio; mobile radio; quadrature phase shift keying; 0 V; 0.48 to 0.54 dB; 1.65 to 1.9 GHz; 3 V; GaAs; MESFET IC; PHS application; Personal Handyphone System; QPSK modulated signals; SPDT switch IC; TDMA/TDD; UHF IC; adjacent channel leakage power suppression; antenna/local switch; chip inductor; circuit design method; dual-use switch; electromagnetic field analysis; forward current flowing; high isolation characteristic; pinchoff voltages; pull-up method; ultra-compact design; Circuit synthesis; Electromagnetic analysis; Electromagnetic fields; Gallium arsenide; Inductors; Insertion loss; MESFET integrated circuits; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508481

Filename

508481