DocumentCode
2138361
Title
High efficiency X-Ku band MMIC power amplifiers
Author
Cardullo, M. ; Page, C. ; Teeter, D. ; Platzker, A.
Author_Institution
Motorola Inc., Phoenix, AZ, USA
Volume
1
fYear
1996
fDate
17-21 June 1996
Firstpage
145
Abstract
MMIC power amplifiers with 3.5 W nominal output power and 49.5% peak power added efficiency over the 8-14 GHz band are described. Efficiency in excess of 40% is obtained over much of the band. The amplifiers utilize Raytheon´s power PHEMT technology. Details of the device performance, circuit design, and evaluation are given. The results presented represent state of the art performance for MMIC circuits over X-Ku band.
Keywords
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; power amplifiers; 3.5 W; 40 to 49.5 percent; 8 to 14 GHz; K-band; MMIC power amplifiers; Raytheon; SHF; X-band; power PHEMT technology; pseudomorphic HEMT; Broadband amplifiers; Circuit synthesis; Gallium arsenide; High power amplifiers; Indium gallium arsenide; MMICs; Microwave devices; PHEMTs; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.508482
Filename
508482
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