Title :
Trends of key advanced device technologies
Author :
Hwang, B. Chester
Author_Institution :
Motorola Inc., USA
Abstract :
Silicon CMOS technology has followed Moore´s law over the past two decodes. It is still on the predicted curve, and it appears that the trend will continue into the next decade. The SIA roadmap published by Sematech in 1994 predicted the progress of semiconductor technology fairly well. Expectations based on the SIA roadmap are now being exceeded; for example, as announced by many companies, the projected 0.25 μm production in 1998 will be met in 1997. Other technologies continue to make progress, along with silicon CMOS technology. The distinctive ones are Thin Film Silicon on insulator (TFSOI), Complementary Gallium Arsenide (CGaAs), and Graded-Channel CMOS (GCMOS). This paper will discuss the status, potential and hurdles of these technologies
Keywords :
CMOS integrated circuits; economics; integrated circuit manufacture; integrated circuit technology; silicon-on-insulator; space vehicle electronics; technological forecasting; 0.25 micron; CMOS technology; GaAs; Moore´s law; SIA roadmap; Sematech; Si; TFSOI; complementary IC technology; graded-channel CMOS; CMOS process; CMOS technology; Gallium arsenide; Moore´s Law; Production; Radio frequency; Semiconductor device manufacture; Semiconductor thin films; Silicon on insulator technology; Space technology;
Conference_Titel :
Advanced Research in VLSI, 1997. Proceedings., Seventeenth Conference on
Conference_Location :
Ann Arbor, MI
Print_ISBN :
0-8186-7913-1
DOI :
10.1109/ARVLSI.1997.634847
