Trends of key advanced device technologies

Author

Hwang, B. Chester

Author_Institution

Motorola Inc., USA

fYear

1997

fDate

15-16 Sep 1997

Firstpage

78

Lastpage

81

Abstract

Silicon CMOS technology has followed Moore´s law over the past two decodes. It is still on the predicted curve, and it appears that the trend will continue into the next decade. The SIA roadmap published by Sematech in 1994 predicted the progress of semiconductor technology fairly well. Expectations based on the SIA roadmap are now being exceeded; for example, as announced by many companies, the projected 0.25 μm production in 1998 will be met in 1997. Other technologies continue to make progress, along with silicon CMOS technology. The distinctive ones are Thin Film Silicon on insulator (TFSOI), Complementary Gallium Arsenide (CGaAs), and Graded-Channel CMOS (GCMOS). This paper will discuss the status, potential and hurdles of these technologies

Keywords

CMOS integrated circuits; economics; integrated circuit manufacture; integrated circuit technology; silicon-on-insulator; space vehicle electronics; technological forecasting; 0.25 micron; CMOS technology; GaAs; Moore´s law; SIA roadmap; Sematech; Si; TFSOI; complementary IC technology; graded-channel CMOS; CMOS process; CMOS technology; Gallium arsenide; Moore´s Law; Production; Radio frequency; Semiconductor device manufacture; Semiconductor thin films; Silicon on insulator technology; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Research in VLSI, 1997. Proceedings., Seventeenth Conference on

Conference_Location

Ann Arbor, MI

Print_ISBN

0-8186-7913-1

Type

conf

DOI

10.1109/ARVLSI.1997.634847

Filename

634847