Title :
A new high sensitivity photo-transistor for area image sensors
Author :
Yamashita, H. ; Matsunaga, Y. ; Iesaka, M. ; Manabe, S. ; Harada, N.
Author_Institution :
Toshiba ULSI Res. Center, Kawasaki, Japan
Abstract :
A novel MOS phototransistor with a high optical gain, called a double-gate floating-surface phototransistor, has been proposed and fabricated. The phototransistor realizes a 0.8-electron RMS noise equivalent signal over a 3.58-MHz-wide band. It achieves a dynamic range of 75 dB with an amplification characteristic suitable for TV-camera application. It is concluded that an ultra-high-sensitivity image sensor can be realized with this device.<>
Keywords :
electron device noise; image sensors; insulated gate field effect transistors; phototransistors; television camera tubes; 3.58 MHz; MOS phototransistor; RMS noise equivalent signal; TV-camera application; amplification characteristic; area image sensors; double-gate floating-surface phototransistor; dynamic range; high optical gain; ultra-high-sensitivity image sensor; Capacitance; Electrodes; Electron optics; Image sensors; Optical noise; Optical sensors; Stimulated emission; Thickness control; Ultra large scale integration; Wideband;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32755
