Title :
A 3 W X-Band Power MMIC Amplifier with Buried-Plated-Heat-Sink Transistors
Author :
Tsukahara, Yoshihiro ; Sasaki, Yoshinobu ; Kunii, Tetsuo ; Kosaki, Katsuya ; Kitano, Toshiaki ; Hosogi, Kenji ; Okuda, Yasunori ; Kawano, Hajime ; Ishikawa, Takahide ; Mitsui, Yasuo
Author_Institution :
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641 Japan. Tel: +81 727 84 7384, Fax: +81 727 80 2694, E-mail: tukahara@oml.melco.co.jp
Abstract :
This paper describes successful application of a Buried-Plated-Heat-Sink Transistor named "Advanced SIV FET", to a 3 W high power MMIC amplifier The low thermal resistance and low source parasitic inductance as well as the rigidness of the Advanced SIV FET enables one to achieve high performance MMICs with a high production yield. The developed MMIC delivers an output power of 3 W and a power added efficiency of 32%. Reduction of production cost has been also intended by employing lumped element circuits to reduce the chip size.
Keywords :
Costs; FETs; High power amplifiers; Inductance; MMICs; Power amplifiers; Power generation; Production; Thermal resistance; Transistors;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338106
