DocumentCode
2138618
Title
A 3 W X-Band Power MMIC Amplifier with Buried-Plated-Heat-Sink Transistors
Author
Tsukahara, Yoshihiro ; Sasaki, Yoshinobu ; Kunii, Tetsuo ; Kosaki, Katsuya ; Kitano, Toshiaki ; Hosogi, Kenji ; Okuda, Yasunori ; Kawano, Hajime ; Ishikawa, Takahide ; Mitsui, Yasuo
Author_Institution
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-8641 Japan. Tel: +81 727 84 7384, Fax: +81 727 80 2694, E-mail: tukahara@oml.melco.co.jp
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
138
Lastpage
143
Abstract
This paper describes successful application of a Buried-Plated-Heat-Sink Transistor named "Advanced SIV FET", to a 3 W high power MMIC amplifier The low thermal resistance and low source parasitic inductance as well as the rigidness of the Advanced SIV FET enables one to achieve high performance MMICs with a high production yield. The developed MMIC delivers an output power of 3 W and a power added efficiency of 32%. Reduction of production cost has been also intended by employing lumped element circuits to reduce the chip size.
Keywords
Costs; FETs; High power amplifiers; Inductance; MMICs; Power amplifiers; Power generation; Production; Thermal resistance; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338106
Filename
4139062
Link To Document