DocumentCode
2138688
Title
A BiCMOS Low Voltage Power Amplifier for Wireless Communications
Author
Fortes, Fernando ; Freire, J Costa ; Rosárno, Maria João do
Author_Institution
Instituto de Telecomunicações, Instituto Superior Técnico, Av. Rovisco Pais., 1096 Lisboa, Portugal. fortes@torga.1x.it.pt
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
150
Lastpage
155
Abstract
This paper describes the design and test of a low voltage monolithic power amplifier for DECT specifications. The circuit is implemented in a standard low power BiCMOS process but uses a non standard transistor structure. The standard transistor model was adjusted for this structure. The circuit has a die area of 0.52mm2 with an external output matching network. The amplifier was optimised for a 3V power supply operation.
Keywords
BiCMOS integrated circuits; Circuit simulation; Circuit testing; Foundries; Impedance matching; Low voltage; Microwave transistors; Power amplifiers; Radiofrequency amplifiers; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338108
Filename
4139064
Link To Document