De-embedding technique for S-parameter measurements under high RF power, coupled to thermal imaging

This work deals with a method for determining accurately reflection coefficient of one-port devices submitted to high RF power. A de-embedding theory based on S-matrix is carried out for mismatches of the test setup components: power amplifier, power circulator and probe. This bench was designed for reliability issues of RF components. An example of bench application on the new bulk acoustic wave resonator is presented. Those components are now widely used to build RF-filters in wireless-telecommunication systems. Moreover, an infrared camera with high spatial resolution (2 ¿m/pixel) gives complementary information about the temperature induced by self-heating inside probe and device, and its dependence on the RF power.