A silicon MOS process for integrated RF power amplifiers

Author

Dragon, C. ; Costa, J. ; Lamey, D. ; Ngo, D. ; Burger, W. ; Camilleri, N.

Author_Institution

Commun. Products Lab., Motorola Inc., Tempe, AZ, USA

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

257

Abstract

A silicon-based technology is presented which integrates passive components with a silicon power MOSFET for use in integrated power amplifiers at UHF, VHF, and RF frequencies. This low-cost process incorporates capacitors, inductors, resistors, ground vias, transmission lines, and an ESD protection diode. A design library containing models and layouts for the active and passive components was compiled.

Keywords

MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; VHF amplifiers; electrostatic discharge; elemental semiconductors; integrated circuit layout; integrated circuit modelling; integrated circuit technology; power amplifiers; power integrated circuits; protection; radiofrequency amplifiers; silicon; ESD protection diode; RF frequencies; Si; Si MOS process; UHF; VHF; capacitors; design library; ground vias; inductors; integrated RF power amplifiers; layouts; low-cost process; models; passive components; power MOSFET; resistors; transmission lines; Inductors; MOS capacitors; MOSFET circuits; Power MOSFET; Power amplifiers; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Resistors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508506

Filename

508506