Invited talk: Emerging magnetic memories

Author

Gallagher, William J.

Author_Institution

International Business Machines

fYear

2012

fDate

20-20 April 2012

Firstpage

1

Lastpage

1

Abstract

Summary form only. This talk will review emerging MRAM technologies, beginning with field-switched MRAMs that have been in product form for several years now, and extending to spin-torque MRAM under development now for higher density applications. Considerations for scaling to very small cell sizes will be discussed; in particular the importance of perpendicular magnetic anisotropy materials. Standard MRAM approaches involve the two-terminal magnetic tunnel junction device, that both stores the information and is used to read it out. A three-terminal magnetic device with potential advantages for speed will also be discussed, along with another approach dubbed "Racetrack" memory, which has the potential for three-dimensional shift-register like storage and very high densities.

Keywords

MRAM devices; magnetic anisotropy; magnetic devices; magnetic tunnelling; shift registers; MRAM approaches; MRAM technology; field-switched MRAM; higher density applications; magnetic memory; perpendicular magnetic anisotropy materials; spin-torque MRAM; two-terminal magnetic tunnel junction device; very small cell sizes; Board of Directors; Educational institutions; Junctions; Magnetic memory; Materials; Physics; Standards organizations;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices (WMED), 2012 IEEE Workshop on

Conference_Location

Boise, ID

ISSN

1947-3834

Print_ISBN

978-1-4577-1735-2

Type

conf

DOI

10.1109/WMED.2012.6202608

Filename

6202608