• DocumentCode
    2139017
  • Title

    PMOS device performance improvement using buried contact implants

  • Author

    Qin, Shuang ; McDaniel, Troy ; Liu, L.J. ; Burke, Robin ; Hu, Yongjun Jeff ; McTeer, Allen ; Pun, B. ; Mitkova, M. ; Miranda, Paulo ; Zoller, R. ; Seibert, Matthias ; Latif, Muhammad Rizwan ; Mitkova, M. ; Ailavajhala, Mahesh S. ; Chen, Peng ; Mitkova, M.

  • Author_Institution
    Micron Technol., Inc., Boise, ID, USA
  • fYear
    2012
  • fDate
    20-20 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This Poster Session discusses the following: PMOS Device Performance Improvement using Buried Contact Implants; Deep Trench Patterning and Lift-off Resist in Micro-fluidic Devices; and Nano-ionic Conductive Bridge Memristors based on Chalcogenide Glasses: Electrical Performance Characterization and Modeling.
  • Keywords
    MOSFET; chalcogenide glasses; integrated circuits; memristors; microfluidics; nanopatterning; 2012 IEEE workshop; PMOS device performance improvement; WMED; buried contact implants; chalcogenide glasses; deep trench patterning; electron devices; lift-off resist; micro-fluidic devices; microelectronics; nano-ionic conductive bridge memristors; poster session; Educational institutions; Glass; Implants; Performance evaluation; Sensors; Silver; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices (WMED), 2012 IEEE Workshop on
  • Conference_Location
    Boise, ID
  • ISSN
    1947-3834
  • Print_ISBN
    978-1-4577-1735-2
  • Type

    conf

  • DOI
    10.1109/WMED.2012.6202610
  • Filename
    6202610