Title :
Analytical model of deeply-scaled thyristors for memory applications
Author :
Ventrice, D. ; Fantini, P. ; Betto, D. ; Carnevale, G. ; Benvenuti, A.
Author_Institution :
R&D Technol. Dev., Micron Inc., Agrate Brianza, Italy
Abstract :
In this paper we propose an analytical model for the static operation of thyristor, aiming at clarifying the basic physics involved in the switching from the low-conductance to the high-conductance state of the device. Modeling results are compared to TCAD numerical simulations, showing that the analytical calculations can nicely reproduce the main features of the current-voltage device characteristics.
Keywords :
numerical analysis; random-access storage; technology CAD (electronics); thyristors; TCAD numerical simulations; analytical model; current-voltage device characteristics; deeply-scaled thyristors; high-conductance state; low-conductance state; memory applications; Analytical models; Charge carrier processes; Equations; Mathematical model; P-n junctions; Thyristors; T-RAM; TCAD; compact model; thyristor;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2012 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4577-1735-2
DOI :
10.1109/WMED.2012.6202616
