DocumentCode :
2139167
Title :
Leaky wave behaviour in the silicon H-guide with optically induced plasma region
Author :
Satomura, Y. ; Sumida, S. ; Tsutsumi, M.
Author_Institution :
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
Volume :
1
fYear :
1996
fDate :
17-21 June 1996
Firstpage :
287
Abstract :
The propagation properties of leaky millimeter waves in the silicon H-guide containing optically induced plasma region have been investigated at Q band including NRD-guide behaviour. The possible optical control devices, such as switching devices from guided to leaky waves, have been examined by utilizing the transition characteristics from guided waves into leaky waves due to optical illumination.
Keywords :
elemental semiconductors; nonradiative dielectric waveguides; photoconducting switches; semiconductor plasma; silicon; NRD guide; Q band; Si; guided waves; leaky waves; millimeter wave propagation; optical control device; optically induced plasma; silicon H-guide; switching device; Frequency; Lighting; Millimeter wave technology; Optical attenuators; Optical control; Optical devices; Optical waveguides; Plasma properties; Plasma waves; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3246-6
Type :
conf
DOI :
10.1109/MWSYM.1996.508513
Filename :
508513
Link To Document :
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