Title :
Pulsed laser/ion beam treatment of Ge/Si and Ge/Al2O3 thin film structures
Author :
Batalov, R.I. ; Bayazitov, R.M. ; Novikov, H.A. ; Shustov, V.A. ; Faizrakhmanov, I.A. ; Lyadov, N.M. ; Galkin, K.N. ; Gaiduk, P.I. ; Ivlev, G.D. ; Prakopyeu, S.L.
Author_Institution :
Kazan Phys.-Tech. Inst., Kazan, Russia
Abstract :
Vacuum deposition of Ge thin films onto Si and Al2O3 substrates by magnetron and ion-beam assisted sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited Ge films by powerful laser or ion beams was performed. The dependence of structural and optical properties of Ge/Si and Ge/Al2O3 films on parameters of pulsed treatments was investigated. Optimum parameters for deposition and pulsed treatments resulted in light emitting layers are determined.
Keywords :
elemental semiconductors; germanium; ion beam assisted deposition; laser beam annealing; pulsed laser deposition; semiconductor growth; semiconductor thin films; sputter deposition; vacuum deposition; Al2O3; Al2O3 substrate; Ge; Si; Si substrate; ion beam treatment; ion-beam assisted sputtering; light emitting layers; magnetron assisted sputtering; nanosecond pulsed annealing; optical properties; pulsed laser treatment; sputtering deposition; structural properties; substrate temperature; thin film structures; vacuum deposition; Aluminum oxide; Annealing; Films; Laser beams; Pulsed laser deposition; Silicon; Substrates;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
Print_ISBN :
978-1-4799-0016-9
DOI :
10.1109/CAOL.2013.6657630
