Pulsed laser/ion beam treatment of Ge/Si and Ge/Al2O3 thin film structures

Author

Batalov, R.I. ; Bayazitov, R.M. ; Novikov, H.A. ; Shustov, V.A. ; Faizrakhmanov, I.A. ; Lyadov, N.M. ; Galkin, K.N. ; Gaiduk, P.I. ; Ivlev, G.D. ; Prakopyeu, S.L.

Author_Institution

Kazan Phys.-Tech. Inst., Kazan, Russia

fYear

2013

fDate

9-13 Sept. 2013

Firstpage

342

Lastpage

343

Abstract

Vacuum deposition of Ge thin films onto Si and Al₂O₃ substrates by magnetron and ion-beam assisted sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited Ge films by powerful laser or ion beams was performed. The dependence of structural and optical properties of Ge/Si and Ge/Al₂O₃ films on parameters of pulsed treatments was investigated. Optimum parameters for deposition and pulsed treatments resulted in light emitting layers are determined.

Keywords

elemental semiconductors; germanium; ion beam assisted deposition; laser beam annealing; pulsed laser deposition; semiconductor growth; semiconductor thin films; sputter deposition; vacuum deposition; Al₂O₃; Al₂O₃ substrate; Ge; Si; Si substrate; ion beam treatment; ion-beam assisted sputtering; light emitting layers; magnetron assisted sputtering; nanosecond pulsed annealing; optical properties; pulsed laser treatment; sputtering deposition; structural properties; substrate temperature; thin film structures; vacuum deposition; Aluminum oxide; Annealing; Films; Laser beams; Pulsed laser deposition; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on

Conference_Location

Sudak

ISSN

2160-1518

Print_ISBN

978-1-4799-0016-9

Type

conf

DOI

10.1109/CAOL.2013.6657630

Filename

6657630