Title :
Analysis of electromagnetic wave propagation on coplanar waveguides on doped semiconductor substrates
Author :
LaRocca, T.R. ; Reyes, A.C. ; El-Ghazaly, S.M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
High resistivity silicon substrates demonstrated strong potential for applications as a microwave and millimeter wave substrate. A method to simulate a coplanar waveguide (CPW) on a doped semiconductor substrate is presented. Its salient point is the inclusion of a voltage dependent depletion width and built-in voltage due to the metal-semiconductor (Schottky) contact. The attenuation, effective dielectric constant, and characteristic impedance are determined for different modes and applied biases.
Keywords :
Schottky barriers; coplanar waveguides; elemental semiconductors; silicon; waveguide theory; Si; attenuation; built-in voltage; characteristic impedance; coplanar waveguide; doped semiconductor substrate; effective dielectric constant; electromagnetic wave propagation; high resistivity silicon; metal-semiconductor Schottky contact; microwaves; millimeter waves; simulation; voltage dependent depletion width; Conductivity; Coplanar waveguides; Dielectric substrates; Electromagnetic analysis; Electromagnetic propagation; Electromagnetic waveguides; Millimeter wave propagation; Semiconductor waveguides; Silicon; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508515
