Title :
Determination of FET Extrinsic Elements by Electromagnetic Simulation: Comparison of Microstrip and Coplanar Environment
Author :
Huynh, N.-H. ; Heinrich, W. ; Keller, R.
Author_Institution :
Ferdinand-Braun-Institut fÿr Hochfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin / Germany, Tel.: +49-30-6392-2627, FAX: +49-30-6392-2642, email: huynh@fbh-berlin.de
Abstract :
The FET inductances and extrinsic capacitances are calculated by means of the 3D Finite-Difference method in frequency domain (FDFD). The results are used to study the influence of transmission-line environment (coplanar or microstrip) on FET equivalent circuit. This allows to predict changes of the extrinsic elements when varying periphery, e.g., using a coplanar-based FET model in a microstrip circuit. Additional measurements are not required. Furthermore, the distance of the source via in the microstrip case is varied and the resulting changes in the model are investigated.
Keywords :
Capacitance; Circuit simulation; Coplanar waveguides; Coupling circuits; Equivalent circuits; Frequency domain analysis; Inductance; Microstrip; Microwave FETs; Transmission lines;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338006
