Title :
Microstructure and chemical composition of heterogeneous crystal GaSe:AgGaS2
Author :
Atuchin, V.V. ; Andreev, Yu.M. ; Beisel, N.F. ; Tsygankova, A.R. ; Gavrilova, Tatiana A. ; Pokrovsky, L.D. ; Saprykin, A.I.
Author_Institution :
Lab. of Opt. Mater. & Struct., A.V.Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The GaSe crystal doped with AgGaS2 has been grown and evaluated by SEM and TEM. The chemical composition analysis has been produced by atomic spectrometry methods. Micromorphology and structural parameters of GaSe:AgGaS2 crystal are very similar to those of pure GaSe. The inhomogeneous distribution of Ag over crystal probes has been detected by atomic-absorption spectrometry (AAS). Generally, the GaSe:AgGaS2 crystal has been classified as a GaSe:S solid solution with Ag precipitation.
Keywords :
III-VI semiconductors; atomic absorption spectroscopy; crystal growth from melt; crystal microstructure; crystal morphology; gallium compounds; precipitation; scanning electron microscopy; semiconductor growth; silver compounds; solid solutions; transmission electron microscopy; AAS; GaSe:AgGaS2; SEM; TEM; atomic absorption spectrometry; atomic spectrometry; chemical composition; crystal growth; heterogeneous crystal; inhomogeneous distribution; micromorphology; microstructure; precipitation; solid solution; structural parameters; Crystals; Frequency conversion; Gases; Nonlinear optics; Optical waveguides; Solids; Spectroscopy;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
Print_ISBN :
978-1-4799-0016-9
DOI :
10.1109/CAOL.2013.6657640
