Microstructure and chemical composition of heterogeneous crystal GaSe:AgGaS2

Author

Atuchin, V.V. ; Andreev, Yu.M. ; Beisel, N.F. ; Tsygankova, A.R. ; Gavrilova, Tatiana A. ; Pokrovsky, L.D. ; Saprykin, A.I.

Author_Institution

Lab. of Opt. Mater. & Struct., A.V.Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2013

fDate

9-13 Sept. 2013

Firstpage

368

Lastpage

370

Abstract

The GaSe crystal doped with AgGaS₂ has been grown and evaluated by SEM and TEM. The chemical composition analysis has been produced by atomic spectrometry methods. Micromorphology and structural parameters of GaSe:AgGaS₂ crystal are very similar to those of pure GaSe. The inhomogeneous distribution of Ag over crystal probes has been detected by atomic-absorption spectrometry (AAS). Generally, the GaSe:AgGaS₂ crystal has been classified as a GaSe:S solid solution with Ag precipitation.

Keywords

III-VI semiconductors; atomic absorption spectroscopy; crystal growth from melt; crystal microstructure; crystal morphology; gallium compounds; precipitation; scanning electron microscopy; semiconductor growth; silver compounds; solid solutions; transmission electron microscopy; AAS; GaSe:AgGaS₂; SEM; TEM; atomic absorption spectrometry; atomic spectrometry; chemical composition; crystal growth; heterogeneous crystal; inhomogeneous distribution; micromorphology; microstructure; precipitation; solid solution; structural parameters; Crystals; Frequency conversion; Gases; Nonlinear optics; Optical waveguides; Solids; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on

Conference_Location

Sudak

ISSN

2160-1518

Print_ISBN

978-1-4799-0016-9

Type

conf

DOI

10.1109/CAOL.2013.6657640

Filename

6657640