Molecularly engineered variable dielectric nanocomposites to embed precision capacitors on chip

As remarkable as IC production has been, in either bipolar or CMOS configuration there exist limitations to the technology. Passive components, resistors, capacitors, and inductors, are added in significant quantities to ICs to provide functioning devices. In most modern systems, the part count and space required for passive components far exceeds that devoted to the integrated circuits. In some cases, the passives are inevitable to provide a degree of customization to the integrated circuit, providing range change or amplifier gain capability for example. We report on the development of a self assembled silicon polymer nanocomposite dielectric material which undergoes large change in dielectric constant with exposure to deep ultraviolet radiation and its use in capacitor formation. A capacitor thus produced was able to have its electrical value tuned to a precise value optically. The material presents a path for embedding precision capacitors on integrated circuits and eliminates the need for external passive capacitors