Title :
Optimal Design Parameters for High Performant InP HEMT Frequency Doublers
Author :
Schreurs, D. ; van der Zanden, K. ; Vandenberghe, S. ; Carchon, G. ; Raedt, W. De ; Nauwelaers, B.
Author_Institution :
K.U.Leuven, div. ESAT-TELEMIC, Kardinaal Mercierlaan 94, B-3001 Heverlee, Belgium. e-mail: dominique.schreurs@esat.kuleuven.ac.be, tel: +32-16-321821, fax: +32-16-321986
Abstract :
HEMT frequency doublers inherently outperform FET frequency doublers due to the difference in their physical characteristics. We have determined that the best doubler performance can be obtained with pseudomorphic InP HEMTs with the gate biased for a maximal derivative of the transconductance. This optimal operating condition has been applied during the design of small-band and broadband 38 GHz coplanar waveguide MMIC frequency doublers, of which the excellent measurement results are presented.
Keywords :
Coplanar waveguides; Frequency; HEMTs; Indium phosphide; MMICs; Power generation; Power harmonic filters; Power system harmonics; Transconductance; Voltage;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338023
