Title :
Deep submicron device with buried insulator between source/drain polysilicon (BIPS)
Author :
Shimizu, M. ; Inuishi, M. ; Ogawa, T. ; Miyatake, H. ; Tsukamoto, K. ; Akasaka, Y.
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A novel isolation technology, called buried insulator between source/drain polysilicon (BIPS), is described. The BIPS isolation structure consists of refilling CVD (chemical vapor deposition) oxides in openings between source/drain polysilicon patterns by double photoresist etchback. A defect- and bird´s beak-free process can be realized by this isolation. Devices with BIPS isolation are compared with LOCOS (local oxidation of silicon) with respect to isolation parasitic effects and current drive capability. A 0.5- mu m isolation is achieved, and the narrow channel effects are almost suppressed with BIPS isolation. The subthreshold characteristics of devices with BIPS isolation give the same shape value as those for conventional devices with LOCOS isolation. A ring oscillator with BIPS isolation exhibits a propagation delay time of 69 ps/gate.<>
Keywords :
VLSI; digital integrated circuits; field effect integrated circuits; integrated circuit technology; oscillators; 0.5 micron; 69 ps; BIPS; BIPS isolation; LOCOS; MOS device isolation; ULSI; bird´s beak-free process; buried insulator between source/drain polysilicon; current drive capability; deep submicron device isolation; defectfree process; double photoresist etchback; isolation parasitic effects; isolation structure; isolation technology; local oxidation of silicon; narrow channel effects; propagation delay time; ring oscillator; subthreshold characteristics; Chemical vapor deposition; Etching; Insulation; Isolation technology; Oxidation; Propagation delay; Resists; Ring oscillators; Shape; Silicon;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32760
