Title :
Reduced Leakage CPW Interconnect and Schottky Diodes on SiO2-High Resistivity Silicon Substrate
Author :
Wu, Y ; Armstrong, BM. ; Gamble, HS ; Yang, S. ; Fusco, VF ; Stewart, Jac
Author_Institution :
Northern Ireland Semiconductor Research Centre, Department of Electrical and Electronic Engineering, The Queen´´s University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland. Tel: 01232-335462, Fax: 01232-667023, email: y.wu
Abstract :
In this paper a novel implanted Schottky diode is designed. The diode and it´s CPW interconnect have localized SiO2 insulation barriers included. These are shown to help reduce the substrate leakage current that acts in parallel with the diode. Also, the SiO2 barriers reduce diode shot noise hence improve detection performance. Experimental evidence is given in order to justify these claims.
Keywords :
Conductivity; Coplanar waveguides; Detectors; Dielectric substrates; Gunshot detection systems; Leakage current; Low voltage; Schottky diodes; Semiconductor diodes; Silicon;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338027
