Title :
A charge-conserving non-quasistatic MOSFET model for SPICE transient analysis
Author :
Hong June Park ; Ping Keung Ko ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
An analytic charge-conserving nonquasistatic (NQS) model has been derived for long-channel MOSFETs and implemented in SPICE3. It is based on an approximate solution to the current-continuity equation. Comparison has been made among this model, the numerical solution to the 1-D current-continuity equation, and the quasistatic (QS) SPICE models. The charge injection at the turnoff transient of a NMOS switch has been simulated using this model and conventional QS models, and it has been found that the QS models give inaccurate results even for the moderately short channel (3- mu m) MOSFETs when the input voltage is changing at the moment of turnoff. A differential sample-hold circuit has also been simulated using this model, and the results are compared with those from QS models. The CPU time using this model is around 3 to 4 times longer than for the conventional QS SPICE models.<>
Keywords :
electronic engineering computing; insulated gate field effect transistors; semiconductor device models; transients; NMOS switch; SPICE transient analysis; SPICE3; charge conserving nonquasistatic model; charge injection; current-continuity equation; differential sample-hold circuit; input voltage; long-channel MOSFETs; turnoff transient; Central Processing Unit; Equations; Iron; MOSFET circuits; Numerical models; Predictive models; Random access memory; SPICE; Switching circuits; Transient analysis;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32765
