DocumentCode
2140618
Title
Three-Dimensional MMIC Interconnect Process using Photosensitive BCB and STO Capacitors
Author
Inoue, Koh ; Kamogawa, Kenji ; Nishikawa, Kenjiro ; Ikuta, Kenji ; Onodera, Kiyomitsu ; Hirano, Makoto
Author_Institution
NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan. kinoue@aecl.ntt.co.jp
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
642
Lastpage
647
Abstract
This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.
Keywords
Capacitors; Dielectrics; Fabrication; Indium phosphide; Integrated circuit interconnections; Laboratories; MMICs; Plasma applications; Polyimides; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338062
Filename
4139149
Link To Document