Title :
Three-Dimensional MMIC Interconnect Process using Photosensitive BCB and STO Capacitors
Author :
Inoue, Koh ; Kamogawa, Kenji ; Nishikawa, Kenjiro ; Ikuta, Kenji ; Onodera, Kiyomitsu ; Hirano, Makoto
Author_Institution :
NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan. kinoue@aecl.ntt.co.jp
Abstract :
This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.
Keywords :
Capacitors; Dielectrics; Fabrication; Indium phosphide; Integrated circuit interconnections; Laboratories; MMICs; Plasma applications; Polyimides; Resists;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338062
