• DocumentCode
    2140670
  • Title

    Ultrawide Bandwidth Monolithic HEMT Feedback Amplifier

  • Author

    Siweris, H.J. ; Grave, T. ; Kellner, W.

  • Author_Institution
    Siemens AG, Corporate Technology, ZT KM GaAs, D-81730 Munich, Germany. Tel.: +49-89-636-41035, Fax: +49-89-636-40822, e-mail: heinz-juergen.siweris@mchp.siemens.de
  • Volume
    1
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    654
  • Lastpage
    659
  • Abstract
    A three-stage monolithic feedback amplifier has been developed, The MMIC was fabricated on 3-inch GaAs substrates using a production-oriented HEMT technology. The active devices have a gate length of 0.18 ¿m and a cut-off frequency of about 60 GHz. Over a bandwidth of 20 GHz the amplifier circuit combines a flat gain of 22±0.5 dB with better than 12 dB return loss at both ports. The noise figure is about 4 dB for most of the operating frequency band, and the output power at 1 dB gain compression is 8 dBm. The chip has an area of 2.7 mm2.
  • Keywords
    Bandwidth; Circuits; Cutoff frequency; Feedback amplifiers; Gain; Gallium arsenide; HEMTs; MMICs; Noise figure; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.338064
  • Filename
    4139151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2140670