Title :
Ultrawide Bandwidth Monolithic HEMT Feedback Amplifier
Author :
Siweris, H.J. ; Grave, T. ; Kellner, W.
Author_Institution :
Siemens AG, Corporate Technology, ZT KM GaAs, D-81730 Munich, Germany. Tel.: +49-89-636-41035, Fax: +49-89-636-40822, e-mail: heinz-juergen.siweris@mchp.siemens.de
Abstract :
A three-stage monolithic feedback amplifier has been developed, The MMIC was fabricated on 3-inch GaAs substrates using a production-oriented HEMT technology. The active devices have a gate length of 0.18 ¿m and a cut-off frequency of about 60 GHz. Over a bandwidth of 20 GHz the amplifier circuit combines a flat gain of 22±0.5 dB with better than 12 dB return loss at both ports. The noise figure is about 4 dB for most of the operating frequency band, and the output power at 1 dB gain compression is 8 dBm. The chip has an area of 2.7 mm2.
Keywords :
Bandwidth; Circuits; Cutoff frequency; Feedback amplifiers; Gain; Gallium arsenide; HEMTs; MMICs; Noise figure; Power generation;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338064
