DC and millimeter-wave performance of watt-level barrier-intrinsic-n/sup +/ diode-grid frequency multiplier fabricated on III-V compound semiconductors

Author

Hwu, R.J. ; Sadwick, L.P. ; Luhmann, N.C., Jr. ; Rutledge, D.B.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

191

Lastpage

194

Abstract

The authors report the fabrication and millimeter-wave performance of a novel class of monolithic metal-semiconductor heterostructure devices, the barrier-intrinsic-n/sup +/ (BIN) diode-grid frequency multipliers, which are fabricated on III-V compound semiconductors. They also report the measurement of the DC and low-frequency electrical properties of the multiplier. A novel analytical model that accurately describes the structure is presented. Based on the theoretical and experimental studies presented here, the authors predict watt-level CW (continuous wave) output power at 90-180 GHz from a monolithic diode-grid multiplier design using the GaAs BIN concept.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; frequency multipliers; gallium arsenide; semiconductor device models; solid-state microwave devices; 90 to 180 GHz; DC performance; GaAs; III-V compound semiconductors; analytical model; barrier-intrinsic-n/sup +/ diode-grid frequency multiplier; low-frequency electrical properties; millimeter-wave performance; monolithic metal-semiconductor heterostructure devices; watt level CW output power; Capacitance-voltage characteristics; Doping; Fabrication; Frequency conversion; Gallium arsenide; Millimeter wave technology; Oscillators; Power generation; Schottky diodes; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32787

Filename

32787